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  january 2012 doc id 022370 rev 3 1/24 1 VNH7013XP-E automotive integrated h-bridge features maximum v cc voltage: 72 v 10 v compatible inputs r ds(on) per leg: 13 m typical embedded thermal sensor: -8.1 mv/k very low stray inductance in power line description the VNH7013XP-E is an automotive integrated h-bridge intended for a wide range of automotive applications driving dc motors. the device incorporates a dual channel and two single channel mosfets. all the devices are designed using stmicroelectronics ? well known and proven proprietary vipower ? m0-s7 technology that allows to integrate in a package four different channels in h-bridge topology. this package, specifically designed for the harsh automotive environment offers improved thermal performance thanks to exposed die pads. moreover, its fully symmetrical mechanical design allows superior manufacturability at board level. type r ds(on) i out v ccmax VNH7013XP-E 13 m typ (per leg) 40 a 72 v (1) 1. per leg: sum of the two bv dss (hsd + lsd); v cc > 36 v whole bridge must be switched off; powersso-36 tp table 1. device summary package order codes tube tape and reel powersso-36 tp VNH7013XP-E vnh7013xptr-e www.st.com
contents VNH7013XP-E 2/24 doc id 022370 rev 3 contents 1 block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 package and pcb thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 powersso-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1.1 thermal calculation in clockwise and anti-clockwise operation in steady- state mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1.2 thermal resistances definition (values according to the pcb heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1.3 thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1.4 single pulse thermal impedance definition (values according to the pcb heatsink area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4 package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 ecopack ? packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.2 powersso-36 tp package information . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3 powersso-36 tp packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
VNH7013XP-E list of tables doc id 022370 rev 3 3/24 list of tables table 1. device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 3. absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 4. power off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 5. power on. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 6. dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 7. gate resistance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 8. source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 9. switching on hsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 10. switching on lsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 11. switching off hsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 12. switching off lsd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 13. thermal sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 14. thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 16 table 15. thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 16. powersso-36 tp mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 table 17. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
list of figures VNH7013XP-E 4/24 doc id 022370 rev 3 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. configuration diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 3. single pulse maximum current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 4. gate charge vs gate-source voltage hs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5. gate charge vs gate-source voltage ls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 6. capacitance variations hs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 7. capacitance variations ls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 8. thermal sensor voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 9. gate charge test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 10. test circuit for inductive load switching and diode recovery times . . . . . . . . . . . . . . . . . . . 13 figure 11. switching times test circuit for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 12. powersso-36 pc board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 13. chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 14. auto and mutual r thj-amb vs pcb copper area in open box free air condition . . . . . . . . . . 16 figure 15. powersso-36 hsd thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18 figure 16. powersso-36 lsd thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 18 figure 17. thermal fitting model of an h-bridge in powersso-36. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 18. powersso-36 tp package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 19. powersso-36 tp tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 20. powersso-36 tp tape and reel shipment (suffix ?tr?) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
VNH7013XP-E block diagram and pin description doc id 022370 rev 3 5/24 1 block diagram and pin description figure 1. block diagram figure 2. configuration diagram drain m4 drain m1,m2 gate 4 drain m3 source4 source4 source4 source4 source4 source4 tsa+ tsa- gate 2 source2 source2 source2 source2 source2 source3 source3 source3 source3 gate 3 source3 source2 source3 gate 1 source1 source1 source1 source1 source1 source1 drain4 drain4 drain2 drain3 drain3 drain1 drain m4 drain m1,m2 gate 4 drain m3 source4 source4 source4 source4 source4 source4 tsa+ tsa- gate 2 source2 source2 source2 source2 source2 source3 source3 source3 source3 gate 3 source3 source2 source3 gate 1 source1 source1 source1 source1 source1 source1 drain4 drain4 drain2 drain3 drain3 drain1 tsk-
block diagram and pin description VNH7013XP-E 6/24 doc id 022370 rev 3 table 2. pin definitions and functions pin number symbol function 1 gate 4 gate of the lsd 4 2, 8 drain 4 drain of the lsd 4 3, 4, 5, 6, 7, 9 source 4 source of the lsd 4 10 tsa+ thermal sensor anode 11, 12, 14, 15, 16, 17 source 2 source of the hsd 2 13 drain 2 drain of the hsd 2 18 gate 2 gate of the hsd 2 19 gate 1 gate of the hsd 1 20, 21, 22, 23, 25, 26 source 1 source of the hsd 1 24 drain 1 drain of the hsd 1 27 tsk- thermal sensor cathode 28, 30, 31, 32, 33, 34 source 3 source of the lsd 3 29, 35 drain 3 drain of the lsd 3 36 gate 3 gate of the lsd 3
VNH7013XP-E electrical specifications doc id 022370 rev 3 7/24 2 electrical specifications 2.1 absolute maximum rating figure 3. single pulse maximum current table 3. absolute maximum rating symbol parameter value unit v cc supply voltage (whole bridge switched off) 72 v i max maximum output current (continuous) 40 a v gs_max maximum gate source voltage 18 v i pulse_max maximum single pulse output current 80 (1) 1. pulse duration = 20 ms (see figure 3 ). a t j junction operating temperature 175 c t c case operating temperature -40 to 150 c t stg storage temperature -55 to 150 c i s diode continuous forward current 40 a
electrical specifications VNH7013XP-E 8/24 doc id 022370 rev 3 2.2 electrical characteristics t j = 25 c, unless otherwise specified. table 4. power off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =10ma, v gs = 0 v 36 ? v i dss zero gate voltage drain current (v gs =0v) v ds =28v; -40 c < t j <150c ? 100 a v ds =28v; t j = 25 c ? 10 a i gss gate-source leakage current (v ds =0v) v gs = 10 v ? 100 na table 5. power on symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs ; i d = 1 ma 2 4 v dv gs(th) /dt gate threshold voltage temperature derating v ds = v gs ; i d = 1 ma 7.5 mv/c r ds(on) hs static drain-source on resistance v gs = 10 v; i d = 5 a; t j =25c 5.7 m v gs = 10 v; i d = 5 a; t j = 150 c 11.9 m r ds(on) ls static drain-source on resistance v gs = 10 v; i d = 5 a; t j = 25 c 7.3 m v gs = 10 v; i d = 5 a; t j = 150 c 15.1 m table 6. dynamic symbol parameter test condition min. typ. max. unit g fs_hs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5%. forward transconductance v ds =15v; i d =20a; t j =25c ?20 ?s g fs_ls (1) forward transconductance ? 17.5 ? s c iss_hs input capacitance v ds = 25 v; f = 1 mhz; v gs =0v (see figure 6 ) ? 1836 ? pf c oss_hs output capacitance ? 426 ? pf c rss_hs reverse transfer capacitance ? 55 ? pf c iss_ls input capacitance v ds =25v; f=1mhz; v gs =0v (see figure 7 ) ? 1250 ? pf c oss_ls output capacitance ? 311 ? pf c rss_ls reverse transfer capacitance ? 49 ? pf
VNH7013XP-E electrical specifications doc id 022370 rev 3 9/24 table 7. gate resistance symbol parameter test condition min. typ. max. unit r g_hs gate resistance hs v dd =15v; f gate =1mhz ?20 ? r g_ls gate resistance ls ? 13 ? table 8. source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) 1. pulse width limited by safe operating area. forward on voltage i sd =20a; v gs =0v; t j =25c ?0.91.1v t rr reverse recovery time i sd = 20 a; di/dt = 100 a/s; v dd =20v; t j = 150 c (see figure 10 ) ?50 ns q rr reverse recovery charge ? 28 nc i rrm reverse recovery current ? 0.8 a table 9. switching on hsd symbol parameter test conditions min. typ. max. unit t d(on) turn on delay time v dd =15v; i d =20a; r g =4.7 ; v gs =10v ? 53 ? ns t r rise time ? 319 ? ns q g total gate charge v dd =15v; i d =20a; v gs =10v (see figure 4 and figure 9 ) ?36?nc q gs gate-source charge ? 8.5 ? nc q gd gate-drain charge ? 5 ? nc table 10. switching on lsd symbol parameter test conditions min. typ. max. unit t d(on) turn on delay time v dd =15v; i d =20a; r g =4.7 ; v gs =10v ? 53 ? ns t r rise time ? 430 ? ns q g total gate charge v dd =15v; i d =20a; v gs =10v (see figure 5 and figure 9 ) ?23?nc q gs gate-source charge ? 6 ? nc q gd gate-drain charge ? 2.5 ? nc table 11. switching off hsd symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v dd =15v; i d =20a; r g =4.7 ; v gs =10v (see figure 11 ) ?253?ns t f fall time ? 169 ? ns
electrical specifications VNH7013XP-E 10/24 doc id 022370 rev 3 figure 4. gate charge vs gate-source voltage hs table 12. switching off lsd symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v dd =15v; i d =20a; r g =4.7 ; v gs =10v (see figure 11 ) ?124?ns t f fall time ? 293 ? ns table 13. thermal sensor (1) 1. see figure 8 . symbol parameter test conditions min. typ. max. unit v f chain diode forward voltage t j = 25 c; i f = 250 a (see figure 8 ) 3.72 3.88 4.04 v s f chain temperature coefficient -40 c < t j <175c; i f = 250 a -8.1 mv/k         6gs6 1gn# '!0'#&4 6 $3 6 ) $ 
VNH7013XP-E electrical specifications doc id 022370 rev 3 11/24 figure 5. gate charge vs gate-source voltage ls figure 6. capacitance variations hs         6gs6 1gn# 6 $3 6 ) $  '!0'#&4                    #p& 6ds6 #oss #iss #rss f-hz 6gs '!0'#&4
electrical specifications VNH7013XP-E 12/24 doc id 022370 rev 3 figure 7. capacitance variations ls figure 8. thermal sensor voltage vs temperature                 #p& 6ds6 #oss #iss #rss f-hz 6gs '!0'#&4          ?# ?# ?#  ?#  ?# 6f?th?6 u! u! u! u! u! '!0'#&4
VNH7013XP-E electrical specifications doc id 022370 rev 3 13/24 figure 9. gate charge test circuit figure 10. test circuit for inductive load switching and diode recovery times
electrical specifications VNH7013XP-E 14/24 doc id 022370 rev 3 figure 11. switching times test circuit for resistive load
VNH7013XP-E package and pcb thermal data doc id 022370 rev 3 15/24 3 package and pcb thermal data 3.1 powersso-36 thermal data figure 12. powersso-36 pc board tbd double layers: footprint double layers: 2cm 2 of cu double layers: 8cm 2 of cu four layers: cu on top layer: 16 cm 2 ; cu on bottom layer: 32 cm 2 ; cu on middle layer: total coverage
package and pcb thermal data VNH7013XP-E 16/24 doc id 022370 rev 3 figure 13. chipset configuration figure 14. auto and mutual r thj-amb vs pcb copper area in open box free air condition 3.1.1 thermal calculation in clockwis e and anti-clockwise operation in steady-state mode ("1($'5 5 wk$ 5 wk% 5 wk& 5 wk$ % 5 wk$ & 5 wk% & $ijq $ijq $ijq                           ? #  7 c m  o f # u ! r ea  r e f e r t o 0 #" l ay ou t 2 t h ! 2 t h "  2 t h # 2 t h !"  2 t h ! # 2 t h " # '!0'#&4 note: referred to double layer pcb table 14. thermal calculation in clockwise and anti-clockwise operation in steady- state mode hs a hs b ls a ls b t jhsab t jlsa t jlsb on off off on p dhsa x r thhs + p dlsb x r thhsls + t amb p dhsa x r thhsls + p dlsb x r thlsls + t amb p dhsa x r thhsls + p dlsb x r thls + t amb off on on off p dhsb x r thhs + p dlsa x r thhsls + t amb p dhsb x r thhsls + p dlsa x r thls + t amb p dhsb x r thhsls + p dlsa x r thlsls + t amb
VNH7013XP-E package and pcb thermal data doc id 022370 rev 3 17/24 3.1.2 thermal resistances definition (values according to the pcb heatsink area) r thhs = r thhsa = r thhsb = high side chip thermal resistance junction to ambient (hs a or hs b in on state) r thls = r thlsa = r thlsb = low side chip thermal resistance junction to ambient r thhsls = r thhsalsb = r thhsblsa = mutual thermal resistance junction to ambient between high side and low side chips r thlsls = r thlsalsb = mutual thermal resistance junction to ambient between low side chips 3.1.3 thermal calculati on in transient mode (a) t jhsab = z thhs x p dhsab + z thhsls x (p dlsa + p dlsb ) + t amb t jlsa = z thhsls x p dhsab + z thls x p dlsa + z thlsls x p dlsb + t amb t jlsb = z thhsls x p dhsab + z thlsls x p dlsa + z thls x p dlsb + t amb 3.1.4 single pulse therma l impedance definition (v alues according to the pcb heatsink area) z thhs = high side chip thermal impedance junction to ambient z thls = z thlsa = z thlsb = low side chip thermal impedance junction to ambient z thhsls = z thhsablsa = z thhsablsb = mutual thermal impedance junction to ambient between high side and low side chips z thlsls = z thlsalsb = mutual thermal impedance junction to ambient between low side chips equation 1: pulse calculation formula a. calculation is valid in any dynamic operating condition. p d values set by user. z th r th z thtp 1 ? () + t = where t p t ? =
package and pcb thermal data VNH7013XP-E 18/24 doc id 022370 rev 3 figure 15. powersso-36 hsd thermal impedance junction ambient single pulse figure 16. powersso-36 lsd thermal impedance junction ambient single pulse            ?#7 timesec :4( (3$ cuarea (3$ footprint (3$ cm>#u (3$ cm>#u (3$ ,aye r (s,s$ footprint (s,s$ cm>#u (s,s$ cm>#u (s,s$ ,aye r '!0'#&4 : hs : hsls            ?#7 timesec :4( ,3$ cuarea ,3$ footprint ,3$ cm>#u ,3$ cm>#u ,3$ ,aye r ,s,s$ footprint ,s,s$ cm>#u ,s,s$ cm>#u ,s,s$ ,aye r : ls : lsls '!0'#&4
VNH7013XP-E package and pcb thermal data doc id 022370 rev 3 19/24 figure 17. thermal fitting model of an h-bridge in powersso-36 table 15. thermal parameters (1) 1. the blank space means that the val ue is the same as the previous one. area/island (cm 2 ) footprint 2 8 4l r1 = r7 (c/w) 0.2 r2 = r8 (c/w) 1.6 r3 (c/w) 8 r4 (c/w) 30 16 16 10 r5 (c/w) 40 22 12 5 r6 (c/w) 36 28 10 6 r9 = r15 (c/w) 0.1 r10 = r16 (c/w) 2.8 r11 = r17 (c/w) 22 14 14 14 r12 = r18 (c/w) 49 30 30 20 r13 = r19 (c/w) 52 36 28 16 r14 = r20 (c/w) 50 32 26 18 r21 = r22 (c/w) 80 60 50 40 r23 (c/w) 80 50 45 30 c1 = c7 = c9 = c15 (w.s/c) 0.001 c2 = c8 (w.s/c) 0.009 c3 (w.s/c) 0.09 c4 (w.s/c) 0.5 0.8 0.8 0.8 c5 (w.s/c) 0.8 1.4 2 3 c6 (w.s/c) 5 6 8 10 c10 = c16 (w.s/c) 0.1 c11 = c17 (w.s/c) 0.07 c12 = c18 (w.s/c) 0.45 0.45 0.45 0.6 c13 = c19 (w.s/c) 0.8 1 1.2 2.5 c14 = c20 (w.s/c) 4 5 6 8 c21 = c22 = c23 (w.s/c) 0.01 0.006 0.005 0.005
package and packing information VNH7013XP-E 20/24 doc id 022370 rev 3 4 package and packing information 4.1 ecopack ? packages in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.2 powersso-36 tp package information figure 18. powersso-36 tp package dimensions
VNH7013XP-E package and packing information doc id 022370 rev 3 21/24 table 16. powersso-36 tp mechanical data symbol millimeters min. typ. max. a 2.15 2.47 a2 2.15 2.40 a1 0 0.1 b 0.18 0.36 c 0.23 0.32 d 10.10 10.50 e7.4 7.6 e0.5 e3 8.5 f2.3 g 0.1 h 10.1 10.5 h 0.4 k 0 deg 8 deg l0.6 1 m4.3 n10 deg o1.2 q0.8 s2.9 t3.65 u1.0 x1 1.85 2.35 y1 3 3.5 x2 1.85 2.35 y2 3 3.5 x3 4.7 5.2 y3 3 3.5 z1 0.4 z2 0.4
package and packing information VNH7013XP-E 22/24 doc id 022370 rev 3 4.3 powersso-36 tp packing information figure 19. powersso-36 tp tube shipment (no suffix) figure 20. powersso-36 tp tape and reel shipment (suffix ?tr?) all dimensions are in mm. base qty 49 bulk qty 1225 tube length (0.5) 532 a 3.5 b 13.8 c (0.1) 0.6 a c b base qty 1000 bulk qty 1000 a (max) 330 b (min) 1.5 c (0.2) 13 f 20.2 g (+2 / -0) 24.4 n (min) 100 t (max) 30.4 reel dimensions tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb. 1986 all dimensions are in mm. tape width w 24 tape hole spacing p0 (0.1) 4 component spacing p 12 hole diameter d (0.05) 1.55 hole diameter d1 (min) 1.5 hole position f (0.1) 11.5 compartment depth k (max) 2.85 hole spacing p1 (0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets sealed with cover tape. user direction of feed
VNH7013XP-E revision history doc id 022370 rev 3 23/24 5 revision history table 17. document revision history date revision changes 07-nov-2011 1 initial release 18-jan-2012 2 changed document status from preliminary data to datasheet. 20-jan-2012 3 updated features list.
VNH7013XP-E 24/24 doc id 022370 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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